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| 摘要: |
| 采用低压ZnO压敏电阻配方,利用正电子湮没寿命谱(PAS)及SEM,对试样微结构进行了分析.结果表明,急冷能使低压ZnO压敏电阻的微空洞尺寸增大,缺陷浓度降低.通过分析PAS参数与电性能参数的关系,对急冷能明显降低电压梯度提出了新的解释. |
| 关键词: 正电子湮没,ZnO压敏陶瓷,空位,缺陷,急冷 |
| DOI： |
| 分类号:TN304.93 |
| 基金项目: |
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| Effect of Cooling Rate on the Properties of Low Voltage ZnO Varistor |
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LIN Cong XU Ye-wen XU Zheng
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| Abstract: |
| By adopting low voltage component and designing a series of check experiment,in combination with positron annihilation spectroscopy(PAS) and SEM,it is found that faster cooling rate enhances the vacancy dimension,and deceases the defect concentration.Furthermore,the correlation between PAS parameter and electrical properties is discussed in detail.As a result,a new explanation to electrical properties and grain boundary defect is given. |
| Key words: positron annihilation,ZnO varistor,vacancy,defect,cooling rate |
