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| 摘要: |
| 根据氧化锌压敏电阻的微观结构，提出了势垒交错导致共振隧穿的模型，并运用传递矩阵法合理地解释了ZnO压敏电阻的隧道效应，所得的隧穿电流符合实际ZnO压敏电阻在击穿区的温度特性． |
| 关键词: ZnO压敏电阻 隧道效应 氧化锌压敏电阻 传递矩阵法 微观结构 共振隧穿 温度特性 隧穿电流 击穿 |
| DOI： |
| 分类号:TN304.93 TN16 |
| 基金项目: |
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| Discussion of Tunnelling Effect of ZnO Varistors |
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XU Ye-wen
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| Abstract: |
| With discussion on tunnelling effect of ZnO varistors, a new model is proposed, which can depict barriers stagger near the grains of ZnO varistors. Transfer matrix theory was used to give an explanation of the resonating tunnelling effect of ZnO varistors. The tunnelling current deduced by this model consists of practical temperature behavior of ZnO varistors in breakdown region. |
| Key words: ZnO varistors,tunnelling effect,barriers staggering,resonating tunnelling,transfer matrix theory |
